Photocapacitance/conductance Characteristics of Si-basedHeterostructure Interlaid with P(EHA) Functional PolymersDepending on Illumination Intensity


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Ulusoy M., Balıkçı L. M., Güçlü Ç. Ş.

4th International Conference on Light and Light-based Technologies (ICLLT), Ankara, Türkiye, 16 Mayıs 2024, ss.83, (Özet Bildiri)

  • Yayın Türü: Bildiri / Özet Bildiri
  • Basıldığı Şehir: Ankara
  • Basıldığı Ülke: Türkiye
  • Sayfa Sayıları: ss.83
  • Gazi Üniversitesi Adresli: Evet

Özet

In this study, poly (2-ethylhexyl acrylate) (PEHA) homopolymer was coated

as an interlayer onto n-type Si by initiated chemical vapor deposition (iCVD), which

provides much better deposition control and homogeneity 1. The

capacitance/conductance-voltage (C/(G/ω-V) characteristics were investigated both in

the dark and under illuminations with a reference sample. The basic electrical

parameters and the illumination-induced variation of surface state (Nss) were obtained

for two samples with different methods. The formation of the polymer interlayer resulted

in a reduction in Nss values, both in the inversion and forward biases. Furthermore,

while the photocapacitance sensitivity due to the light effect at constant C values (for

1.2 nF) was 6.3 Vcm2/W for the reference structure, this value was obtained as 12.1

Vcm2/W in the interlayered structure. Consequently, the findings are suitable for

optoelectronic applications, given the significant changes in C and G values that occur

depending on voltage and illumination levels.