High‑performance optoelectronic and thermoelectric properties of transparent conductors based on Tl2O3 under pressure

Aliabad H. A. R., Arzefooni A. A., Sadati S. Z., Özdemir E. G., Khosrojerdi P.

SCIENTIFIC REPORTS, cilt.14, ss.9237-9248, 2024 (SCI-Expanded)

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 14
  • Basım Tarihi: 2024
  • Doi Numarası: 10.1038/s41598-024-58657-9
  • Dergi Adı: SCIENTIFIC REPORTS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, BIOSIS, Chemical Abstracts Core, MEDLINE, Veterinary Science Database, Directory of Open Access Journals
  • Sayfa Sayıları: ss.9237-9248
  • Gazi Üniversitesi Adresli: Evet

Özet

In this work, the full-potential linearized augmented plane wave method (FP- LAPW) and the modified Becke-Johnson (mBJ) functional with spin–orbit (SO) coupling are used the obtain the structural, optoelectronic and thermoelectric properties of Tl2O3 under pressure. The results show that Tl2O3, as transparent conducting oxide (TCO), is a direct bandgap semiconductor with a band gap of 1.23 eV. The band gap value and the effective mass of electrons increases by increasing pressure. Density of state spectra reveal that the nature of electrons in Tl-6s state in the bottom of conduction band, like free electrons in s state, is responsible for the conducting behavior of Tl2O3. A blue shift is observed in optical spectra such as electron energy loss and absorption spectra with an increase in pressure. Obtained dielectric constants under pressure are inversely proportional to the band gap value according to Penn model. The effects of pressure on thermometric properties are also explored. The hydrostatic pressure increases Seebeck coefficient, while it decreases thermal conductivity that is an effective way to the enhancement of the thermoelectric efficiency of TCOs. A figure of merit (ZT) of 0.98 in p-type Tl2O3 is achieved that is desirable for using in thermoelectric devices.