XRD vs Raman for InGaN/GaN Structures

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Bilgili A. K. , Akpinar O., Ozturk M. , ÖZÇELİK S. , ÖZBAY E.

JOURNAL OF POLYTECHNIC-POLITEKNIK DERGISI, cilt.23, ss.291-296, 2020 (ESCI İndekslerine Giren Dergi) identifier

  • Cilt numarası: 23 Konu: 2
  • Basım Tarihi: 2020
  • Doi Numarası: 10.2339/politeknik.537733
  • Sayfa Sayıları: ss.291-296


In this study, InGaN/GaN structures are grown by using Metal Organic Chemical Vapor Deposition (MOCVD) technique. Some structural, optical and morphological properties of InGaN/GaN structures are investigated in detail. For structural analysis, X-ray diffraction (XRD), for optical, Raman and morphological, Atomic Force Microscopy (AFM) measurement techniques are used. In XRD analysis both samples presented hexagonal crystal structure. XRD peaks for these two samples showed small differences dependent on growth conditions. Strain and stress values are determined from XRD and they are compared with Raman results. In Raman analysis, five different chemicals are determined in both samples. Raman analysis results are in good accordance with XRD, growth conditions and AFM images. In AFM images, there can be seen hills and holes and they are partly homogeneous. There are also some white regions in AFM images. According to Raman peak center data, these white regions are detected as white rust.