Analysis of temperature dependent electrical characteristics of Au/n-GaAs/GaAs structures in a wide temperature range

Bengi A., Altindal Ş., Ozcelik S., Agaliyeva S. T., Mammadov T. S.

VACUUM, cilt.83, sa.2, ss.276-281, 2008 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 83 Sayı: 2
  • Basım Tarihi: 2008
  • Doi Numarası: 10.1016/j.vacuum.2008.07.003
  • Dergi Adı: VACUUM
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.276-281
  • Anahtar Kelimeler: Au/n-GaAs/GaAs structures, I-V-T measurements, C-V-T measurements, Current conduction mechanisms, Multistep tunneling, CURRENT-VOLTAGE CHARACTERISTICS, SCHOTTKY-BARRIER DIODES, C-V CHARACTERISTICS, CURRENT TRANSPORT, INTERFACE STATES, I-V
  • Gazi Üniversitesi Adresli: Evet

Özet

The temperature dependence of some electrical parameters of Au/n-GaAs/GaAs structures obtained from the forward bias current-voltage (I-V) and reverse bias capacitance-voltage (C-V) characteristics is studied in the temperature range of 79-400 K. The forward bias current I is found to be proportional to I-o(T)exp(An where A is the slope of Ln(I)-V curves and almost independent of the voltage and temperature, and I-o(T) is relatively a weak function of temperature. The semi-logarithmic Ln(l)-V characteristics based on the thermionic emission (TE) mechanism showed a decrease in the ideality factor (n) and an increase in the zero-bias barrier height (Phi(Bo)) with increasing temperature. These behaviors don't obey the pure thermionic emission (TE) theory. However, the barrier height OB(C-V) determined from the C-2-V plot at high frequency decreased linearly with the temperature. Analysis of the data indicated that the predominant current conduction mechanism of our sample was a trap-assisted multistep tunneling rather than the other mechanisms. (C) 2008 Elsevier Ltd. All rights reserved.