Preparation of graphene doped PVA/n-Si (MPS) Schottky diodes at different ratios and investigation of their electrical properties
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, cilt.132, sa.8, 2026 (SCI-Expanded, Scopus)
- Yayın Türü: Makale / Tam Makale
- Cilt numarası: 132 Sayı: 8
- Basım Tarihi: 2026
- Doi Numarası: 10.1007/s00339-026-09957-6
- Dergi Adı: APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
- Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Aerospace Database, Chemical Abstracts Core, Chimica, Compendex, INSPEC, Academic Search Ultimate (EBSCO), Engineering Source (EBSCO), Materials Science & Engineering Collection (ProQuest), Technology Collection (ProQuest)
- Gazi Üniversitesi Adresli: Evet
Özet
In the present study, three different diodes with an Au/(%x Gr: PVA)/n-Si Metal-Polymer-Semiconductor (MPS) structure were obtained by electrospin coating using a PVA-based interface layer with different graphene doping percentages. The variation of fundamental electrical parameters such as reverse saturation current (I 0), zero-bias barrier height (& Fcy; B0), ideality factor (n), series and shunt resistances (R s and R sh), and rectification ratio (RR) with the doping ratio was investigated in the fabricated Schottky diodes' current-voltage (I-V) graphs. Interface states (N ss)' energy distribution (E c-E ss) was calculated by considering the voltage-dependent barrier height (& Fcy; e(V)) and ideality factor (n(V)) parameters obtained from the I-V data under direct bias. Furthermore, ln(I)-ln(V) graphs were plotted to reveal the possible current conduction mechanism of the obtained structures. It was found that the current conduction mechanism is predominantly governed by a trap charge-limited current (TCLC) mechanism in the medium and high forward voltage region. According to the experimental findings, the results indicate that the electrical parameters are a strong function of the nanomaterials doping ratio. A comparative analysis of the electrical parameters of MPS structures at different graphene doping ratios was performed; it was determined that the Schottky diode with an Au/(3% Gr: PVA)/n-Si structure exhibited the best performance in terms of electrical parameters. In other words, the fact that the produced Au/(3% Gr: PVA)/n-Si structure shows a decrease in n and N ss values compared to other structures, while exhibiting a rise in Phi B0, RR, and R sh values, indicates a significant improvement in device performance. It was concluded that closer-to-ideal Schottky diode characteristics can be obtained by varying the doping ratio in the interface material of the MPS/MIS structure.