Detailed Analysis of Device Parameters by Means of Different Techniques in Schottky Devices

TUĞLUOĞLU N., KORALAY H., Akgul K. B., ÇAVDAR Ş.

JOURNAL OF ELECTRONIC MATERIALS, cilt.45, sa.8, ss.3859-3865, 2016 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 45 Sayı: 8
  • Basım Tarihi: 2016
  • Doi Numarası: 10.1007/s11664-016-4580-8
  • Dergi Adı: JOURNAL OF ELECTRONIC MATERIALS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.3859-3865
  • Anahtar Kelimeler: Schottky device, I-V, C-V, barrier height, ideality factor, density of interface state, CURRENT-VOLTAGE CHARACTERISTICS, INTERFACE-STATE DENSITY, SPIN-COATING TECHNIQUE, ELECTRICAL CHARACTERISTICS, SERIES RESISTANCE, BARRIER DIODES, TEMPERATURE-DEPENDENCE, OXIDE LAYER, SI, CONTACTS
  • Gazi Üniversitesi Adresli: Evet

Özet

In the present work, the detailed device parameters of Au/n-Si (100)/Al Schottky devices are calculated by means of the conductance-voltage-frequency (G-V-f), capacitance-voltage-frequency (C-V-f) and current-voltage (I-V) measurements at 300 K. The structure of the device shows a good rectifying behavior. The barrier height (Phi(B)) value of 0.822 eV from the C-V is determined to be higher than the 0.774 eV from the I-V. The barrier height (Phi(B)) and series resistance (R-s) values of the sample determined from the Cheung and Cheung technique are 0.755 eV and 220.5 Omega, respectively. The values of the carrier donor concentration (N-D), the level of Fermi (E-F), the lowering of image force (Delta Phi(b)), the space charge layer width (W-D) and the maximum electric field (E-max) are determined as 1.305 x 10(15) cm(-3), 0.258 eV, 0.0136 eV, 7.6 x 10(-5) cm and 1.52 x 10(4) V/cm, respectively. The density of the interface state (N-ss) determined from the I-V characteristic ranges from 8.80 x 10(12) eV(-1) cm(-2) to 5.44 x 10(11) eV(-1) cm(-2).