Analysis of I-V characteristics on Au/n-type GaAs Schottky structures in wide temperature range


Karatas S., Altindal Ş.

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, cilt.122, ss.133-139, 2005 (SCI İndekslerine Giren Dergi) identifier identifier

  • Cilt numarası: 122 Konu: 2
  • Basım Tarihi: 2005
  • Doi Numarası: 10.1016/j.mseb.2005.05.018
  • Dergi Adı: MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
  • Sayfa Sayıları: ss.133-139

Özet

The current-voltage (I-V) characteristics of Au/n-GaAs Schottky barrier diodes (SBD) were determined in the temperature range 80-400 K. SBD parameters such as ideality factor n, series resistance R-S and barrier height Phi(b) were extracted from I-V curves using Cheung's method. The barrier height for current transport decreases and the ideality factor increases with the decrease temperatures. Such behavior is attributed to barrier inhomogeneities by assuming a Gaussian distribution of barrier heights at the interface. So that barrier height 0, v have been corrected by taking into account quality factors (n) and the electron tunneling factor (alpha chi(1/2)delta) in the expression of saturation current (I-0) of the Au/n-GaAs Schottky diodes. Thus, a modified In(I-0/T-2) - q(2)sigma(0)(2)/2k(2)T(2) versus 1/T gives Phi(b0)(T = 0) and A* as 0.73 eV and 11.08 A/(cm(2) K-2), respectively, without using the temperature coefficient of the barrier heights. Therefore, it has been concluded that the temperature dependent I-V characteristics of the device can be successfully explained with Gaussian distribution of the BHs. (c) 2005 Elsevier B.V. All rights reserved.