Temperature-dependent electron transport in In0.5Ga0.5P/GaAs grown by MOVPE

ACAR S., Yildiz A., Kasap M., Bosi M.

CHINESE PHYSICS LETTERS, cilt.24, sa.8, ss.2373-2375, 2007 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 24 Sayı: 8
  • Basım Tarihi: 2007
  • Doi Numarası: 10.1088/0256-307x/24/8/059
  • Dergi Adı: CHINESE PHYSICS LETTERS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.2373-2375
  • Gazi Üniversitesi Adresli: Evet

Özet

Hall effect measurements in undoped In0.5Ga0.5P/GaAs alloy grown by metal organic vapour-phase epitaxy (MOVPE) have been carried out in the temperature range 15-350 K. The experimental results are analysed using a two-band model including conduction band transport calculated using an iterative solution of the Boltzmann equation. A good agreement was obtained between theory and experiment. The impurity contents of In0.5Ga0.5P/GaAs alloy, such as donor density N-D, acceptor density N-A and donor activation energy epsilon(D), were also determined.