The Impact of Dopant on the Dielectric Properties of Metal-Semiconductor With ZnFe2O4 Doped Organic Polymer Nanocomposites Interlayer

Alsmael J. A. M., Tan S. O., Tecimer H. U., ALTINDAL Ş., AZIZIAN-KALANDARAGH Y.

IEEE TRANSACTIONS ON NANOTECHNOLOGY, cilt.21, ss.528-533, 2022 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 21
  • Basım Tarihi: 2022
  • Doi Numarası: 10.1109/tnano.2022.3207900
  • Dergi Adı: IEEE TRANSACTIONS ON NANOTECHNOLOGY
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Aerospace Database, Biotechnology Research Abstracts, Chemical Abstracts Core, Communication Abstracts, Compendex, INSPEC, Metadex, Civil Engineering Abstracts
  • Sayfa Sayıları: ss.528-533
  • Anahtar Kelimeler: Polymers, Dielectrics, Capacitance, Conductivity, Semiconductor device measurement, Interface states, Ferrites, Metal-Polymer-Semiconductor structure, Doping, Dielectric properties, Electric modulus, AC conductivity, Frequency dependence, NEGATIVE CAPACITANCE, POLY(VINYL ALCOHOL), FERRITE NANOPARTICLES, FREQUENCY, MODULUS, VOLTAGE, BIAS, CO
  • Gazi Üniversitesi Adresli: Evet

Özet

In this research, the dielectric characteristics of fabricated Al/(ZnFe2O4-PVA)/p-Si structures have been investigated in wide range frequency and voltage. Thus, by deriving capacitance-conductance (C-G/omega) measurements the main parameters of the metal-polymer-semiconductor (MPS) structure such as complex dielectric constants (epsilon ' and epsilon ''), loss tangent (tan delta), complex electric modulus (M ' and M '') and ac electrical conductivity (sigma(ac)), were acquired at frequency and voltage ranges of 1 kHz-1 MHz and (+/- 5V). As a result of the experiment, it was observed that the presence of negative capacitance (NC) at low frequencies differently affects the dielectric properties of the structure. Although the NC effect disappeared at high frequencies by the reduction of the effect of many parameters such as series resistance (R-ss) and interface states (N-ss) with frequency increment, the dielectric properties of the structure varied especially in the reverse bias region. Ultimately, it has been observed that the dielectric properties of the structure are highly dependent on frequency, voltage, N-ss, and polarization.