Effectuality of frequency dependent dielectric characterization of (N:DLC) film deposition between the metal-semiconductor interface

Urgun N., Tan S., Feizollahi Vahid A., Avar B., ALTINDAL Ş.

Physica B: Condensed Matter, vol.698, 2025 (SCI-Expanded) identifier

  • Publication Type: Article / Article
  • Volume: 698
  • Publication Date: 2025
  • Doi Number: 10.1016/j.physb.2024.416753
  • Journal Name: Physica B: Condensed Matter
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, PASCAL, Aerospace Database, Chemical Abstracts Core, Communication Abstracts, Compendex, INSPEC, Metadex, Civil Engineering Abstracts
  • Keywords: AC conductivity, Dielectric, Frequency and voltage dependence, N-doped diamond-like carbon (N:DLC), Nyquist diagram of the M″-M′, Relaxation processes
  • Gazi University Affiliated: Yes

Abstract

Dielectric characterization of metal-interlayer-semiconductor (MIS) structures of N-doped Diamond-Like Carbon (N:DLC) film-coated interlayer is performed to assess their dielectric properties, AC electrical conductivity (σac), and polarization mechanisms. The interlayer's structural analysis is performed using Scanning Electron Microscopy (SEM) and X-ray Photo-electron Spectroscopy (XPS). The in-phase and out-of-phase parts of the complex dielectric constant (ε∗), the complex electric modulus (M∗), the values of tangent loss (tanδ), and σac are determined utilizing admittance-voltage (Y = 1/Z = G + jωC) measurements revealing that their strong sensitivity to voltage and frequency. Remarkably, a relative permittivity (ε′) of 407 at 1 kHz, 104 times higher than traditional SiO2 insulators, is observed, suggesting a significantly enhanced electron density and energy storage capacity for ultracapacitors. The double logarithmic σac vs f plot slope changes between 0.36 and 0.20 at strong accumulation. The intersection point in σac implies a lack of free electrons at higher frequencies, suggesting an electron trapping or recombination process.