The Au/SiO2/n-Si (MOS) structures were exposed to beta-ray irradiation to a total dose of 30 kGy at room temperature. Irradiation effect on dielectric properties of MOS structures were investigated using capacitance-voltage (C-V) and conductance-voltage (G/omega-V) characteristics. The C-V and G/omega-V measurements carried out in the frequency range from 1 kHz to 10 MHz and at various radiation doses, while the dc voltage was swept from positive bias to negative bias for MOS structures. The dielectric constant (epsilon'), dielectric loss (epsilon ''), loss factor (tan delta) and ac electrical conductivity (sigma(ac)) were calculated from the C-V and G/omega-V measurements and plotted as a function of frequency at various radiation doses. A decrease in the epsilon' and epsilon '' were observed when the irradiation dose increased. The decrease in the epsilon' and epsilon '' of irradiated MOS structures in magnitude is explained on the basis of Maxwell-Wagner interfacial polarization. Also, the sigma(ac) is found to decrease with increasing radiation dose. In addition, the values of the tan 6 decrease with increasing radiation dose and give a peak. From the experimental results, it is confirmed that the peak of loss tangent is due to the interaction between majority carriers and interface states which induced by radiation. (C) 2007 Elsevier B.V. All rights reserved.