Platinum doping effect on In2O3 MSM IR photodetectors

Asar T., Baran V., Kurtulus G., Donmez M., Ozcelik H.

Superlattices and Microstructures, cilt.122, ss.650-660, 2018 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 122
  • Basım Tarihi: 2018
  • Doi Numarası: 10.1016/j.spmi.2018.05.035
  • Dergi Adı: Superlattices and Microstructures
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.650-660
  • Anahtar Kelimeler: In2O3, MSM, IR Photodetectors, XRD, HALL, 1-V, INDIUM OXIDE NANOPARTICLES, HIGH SERIES RESISTANCE, ELECTRICAL-PROPERTIES, SCHOTTKY DIODES, THIN-FILMS, LIFETIME, SILICON, SURFACE, INGAAS, RECOMBINATION
  • Gazi Üniversitesi Adresli: Evet

Özet

© 2018 Elsevier LtdThe un-doped and platinum-doped In2O3 thin films were deposited for the investigation of platinum doping effect on the structural, morphological and electrical properties of In2O3 based metal-semiconductor-metal infrared photodetectors. The In2O3 metal-semiconductor-metal infrared photodetectors were also fabricated for obtaining the electrical characteristics such as the carrier recombination lifetime, diffusion length, carrier density, mobility, saturation current, barrier height, series resistance and ideality factor. It was seen from the characterization results that the Pt dopant usage has a prominent effect on properties of In2O3 metal-semiconductor-metal infrared photodetectors which are not extensively studied in the literature.