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Journal of Materials Science: Materials in Electronics, vol.36, no.28, 2025 (SCI-Expanded)
This work focuses on the evaluation of essential dielectric characteristics of the (Sn:Fe2O3) interlayer, including the real and imaginary components of the complex dielectric constant (ε* = ε′ − jε″), electric modulus (M* = M′ + jM″), and complex impedance (Z* = Z′ − jZ″). To enhance the accuracy of the analysis related to dielectric response and charge transport mechanisms, capacitance and conductance were measured under varying frequencies (0.5 kHz to 2 MHz) and applied bias (± 3 V). The ε″ and tanδ versus ln(f) profiles reveal distinct peak formations within the voltage window of 0.7 V to 3 V, with their shifting positions attributed to voltage-induced rearrangements of trapped charges and polarization effects. Dielectric loss (tanδ), AC conductivity (σac), and phase angle (θ) were also derived from the experimental data. The analysis confirms a strong dependence of these parameters on both frequency and voltage, particularly at low and intermediate frequencies where interface states, Maxwell–Wagner polarization, and series resistance significantly affect the response. Remarkably, the (Sn:Fe2O3) interlayer exhibits a high dielectric constant (ε′ ≈ 337.8 at 0.5 kHz), surpassing that of SiO2 by nearly 89 times, highlighting its potential as a high-k dielectric with enhanced energy storage capability in metal–semiconductor structures. The impedance spectra (Nyquist plots) show single semicircles, typical of Debye-type relaxation. Additionally, the ln(σac) vs. ln(f) graph exhibits three distinct linear regions, each corresponding to different dominant conduction processes active at low, mid, and high frequencies.