Akademik Veri Yönetim Sistemi
ACS APPLIED NANO MATERIALS, cilt.6, sa.19, ss.17482-17490, 2023 (SCI-Expanded)
This study examines the high-frequency-dependent characteristics of the PbO/SnO2 double-layer semiconductor (DLS) structures. Recently, researchers have been particularly interested in such structures in terms of their use in electrical and photovoltaic applications. A PbO/SnO2 double layer was successfully coated on a p-type Si substrate (100) wafer with a resistance of 10 Ω cm and a thickness of 280 μm. The Al Schottky (round dot) connections, which have a thickness of 124 nm and a diameter of 1.3 mm, were produced by thermal evaporation. The present study proposes to measure the conductance–voltage (G–V) and capacitance–voltage (C–V) values of the studied Al/PbO/SnO2/p-Si Schottky diode for the frequencies of 500 kHz, 800 kHz, and 1 MHz at a temperature of 300 K, which has been suggested for the first time in literature. Due to the presence of surface states (Nss), PbO/SnO2 double-layer, and series resistance Rs, the C–V and G–V plots show inversion, depletion, and accumulation zones depending on the strong frequency for each frequency tested. Based on the tested frequencies, the reverse-biased C2–V curves are used to compute the fundamental electrical characteristics of the Al/PbO/SnO2/p-Si structures, including the depletion layer (WD), Fermi energy level (EF), diffusion potential (VD), and thickness barrier height (⌀B). We also investigated the capacitance features and the energy density distribution of surface states (Nss) in the PbO/SnO2 double-layer structure by utilizing the measured values of G–V and C–V. The values of ⌀B, VD, and Nss were observed to be 0.54 0.34, and 3.19 10 12 eV–1 cm–2 at 500 kHz, while they were 0.88 0.68, and 1.96 eV–1 cm–2 at 800 kHz and 0.95, 0.75, and 1.47 eV–1 cm–2 at 1 MHz, respectively. It was discovered that the capacitance characteristics of the PbO/SnO2 double-layer structure were substantially dependent on the applied high frequencies. Furthermore, the C–V and G–V measurements revealed that the series resistance and the interface state density of the studied Al/PbO/SnO2/p-Si Schottky diode were critical parameters that significantly affect the electrical parameters offered by the PbO/SnO2 double-layer nanostructure. The results of the study reveal that the manufactured device exhibits outstanding electric characteristics and support the possibility of using DL thin films in electronic devices.