Electrical transport characteristics of Sn/p-Si schottky contacts revealed from I-V-T and C-V-T measurements


Karatas S., Altindal Ş. , Turut A., Cakar M.

PHYSICA B-CONDENSED MATTER, vol.392, pp.43-50, 2007 (Journal Indexed in SCI) identifier identifier

  • Publication Type: Article / Article
  • Volume: 392
  • Publication Date: 2007
  • Doi Number: 10.1016/j.physb.2006.10.039
  • Title of Journal : PHYSICA B-CONDENSED MATTER
  • Page Numbers: pp.43-50
  • Keywords: Schottky contacts, series resistance, barrier height, interface states density, P-TYPE SILICON, HIGH SERIES RESISTANCE, N-TYPE, BARRIER HEIGHT, TEMPERATURE-DEPENDENCE, METAL-SEMICONDUCTOR, INTERFACE STATES, DIODES, PLOT, PARAMETERS

Abstract

The current-voltage (I-P) and capacitance-voltage (C-V) characteristics of metal-semiconductor (Sn/p-Si) Schottky contacts were measured in the temperature range 150-400 K. The effect of the temperature on the series resistances R-S, ideality factors n, the barrier height Phi(b) and interface state density N-SS obtained from the I-V and C-V characteristics were investigated. The n, Phi(b), R-S, and N-SS values were seen to be strongly temperature dependent. The ideality factors, series resistances and interface state densities decreased with increasing temperature for all diodes and the values of n, R-S, and N-SS obtained from I-V and C-V measurements were found in the ranges of 2.024-1.108, 2.083-1.121; 79.508-33.397 Omega; and 2.14x10(13)-0.216x10(13) cm(2)eV(-1), 2.277x10(13)-0.254x10(13) cm(2)eV(-1), respectively. The temperature dependence of energy distribution of interface state density (N-SS) profiles has been determined. from I-V measurements by taking into account the bias dependence of the effective barrier height and ideality factor. (c) 2006 Elsevier B.V. All rights reserved.