Enhanced photoresponse of the AgZnO-doped PVA interfaced Schottky photodiodes under variable illumination
OPTICAL MATERIALS, cilt.179, 2026 (SCI-Expanded, Scopus)
- Yayın Türü: Makale / Tam Makale
- Cilt numarası: 179
- Basım Tarihi: 2026
- Doi Numarası: 10.1016/j.optmat.2026.118345
- Dergi Adı: OPTICAL MATERIALS
- Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Applied Science & Technology Source, Chimica, Compendex, INSPEC, Academic Search Ultimate (EBSCO), Engineering Source (EBSCO)
- Gazi Üniversitesi Adresli: Evet
Özet
AgZnO-doped poly(vinyl alcohol) (PVA) interlayered Schottky photodiodes (PDs) were fabricated on n-type Si substrates, and their illumination-dependent charge transport and photoresponse characteristics were systematically investigated by current-voltage (I-V)measurements under dark conditions and illumination intensities ranging from 20 to 100 mW/cm2. The devices exhibited pronounced rectifying behavior in the dark, whereas the reverse-bias current increased markedly under illumination, confirming efficient PD operation. Thermionic emission (TE) analysis revealed that the ideality factor (n) increased from 3.07 to 11.55, while the Schottky barrier height (Phi B) decreased from 0.758 eV to 0.620 eV with increasing illumination intensity, indicating illumination-induced barrier inhomogeneity and enhanced interface-related transport effects. The extracted series resistance (RS) showed limited variation, whereas the shunt resistance (Rsh) and rectification ratio (RR) decreased under illumination, reflecting increased leakage current contribution and enhanced recombination processes at the interface. The specific detectivity (D*) reached a maximum value of approximately 1.39x1010 Jones, indicating the high sensitivity of the fabricated PDs to weak optical signals. The enhanced optoelectronic performance is attributed to the synergistic role of the AgZnO-doped PVA interlayer, which modifies the effective barrier profile, promotes photogenerated carrier separation, and facilitates interface-assisted charge transport. These findings demonstrate that AgZnO-doped PVA interfacial engineering provides an effective route for tuning the illumination-dependent behavior of Schottky PDs and highlights the potential of these devices for photo-detector and optoelectronic applications.