The behaviour of ultra-high temperature sensitivity and multi-gaussian barrier shape for RGO/PVA-doped CF-based schottky device

Karasu Y. E., Kaymaz A., AZIZIAN-KALANDARAGH Y., ALTINDAL Ş.

Electrochimica Acta, cilt.549, 2026 (SCI-Expanded, Scopus) identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 549
  • Basım Tarihi: 2026
  • Doi Numarası: 10.1016/j.electacta.2025.148095
  • Dergi Adı: Electrochimica Acta
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Chemical Abstracts Core, Chimica, Compendex, INSPEC
  • Anahtar Kelimeler: Current transport mechanisms (CTMs), Multi-Gaussian Distribution (MGD) of barrier height, Reduced graphene oxide (RGO), RGO/PVA-doped cobalt ferrite, Temperature sensitivity of Schottky device, Ultra-High temperature sensor
  • Gazi Üniversitesi Adresli: Evet

Özet

Reduced graphene oxide (RGO) and polyvinyl alcohol (PVA) were doped into cobalt ferrite (CF) to form an interfacial layer. This interlayer was then fabricated onto n-type silicon (Si) to create an Au/(RGO/PVA-doped CF)/(n-Si)/Al Schottky device. The temperature-dependent current-voltage (I-V) characteristics of the fabricated device were examined within 70-400 K, revealing clear transitions in barrier height (ΦB0), ideality factor (n), and current transport mechanisms. The ΦB0 increased from 0.259 eV to 0.893 eV with temperature, while n decreased, indicating barrier inhomogeneity. Gaussian distribution modeling and modified Richardson analysis confirmed Multi-Gaussian barrier profiles, suggesting thermally activated transport at high temperatures. The device exhibited outstanding temperature sensitivity, with values of 13.3-53.6 mA/K (for ±1.5 V constant voltage) and 19.7-36.9 mV/K (for 1 μA constant current), significantly exceeding those of Si/SOI and graphene-polymer sensors. These findings demonstrate that the RGO/PVA-doped CF interlayer not only tailors barrier inhomogeneity but also enables ultra-sensitive, wide-range temperature sensing, making it a compelling candidate for next-generation electronic devices and low-cost sensor applications.