The temperature-dependent dielectric properties of the Au/ZnO-PVA/n-Si structure

AZIZIAN-KALANDARAGH Y., Badali Y., Jamshidi-Ghozlu M., Hanife F., ÖZÇELİK S., ALTINDAL Ş., ...More

Physica B: Condensed Matter, vol.650, 2023 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 650
  • Publication Date: 2023
  • Doi Number: 10.1016/j.physb.2022.414495
  • Journal Name: Physica B: Condensed Matter
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, PASCAL, Aerospace Database, Chemical Abstracts Core, Communication Abstracts, INSPEC, Metadex, Civil Engineering Abstracts
  • Keywords: ZnO-PVA nanocomposite, Dielectric properties, Capacitance -voltage, Temperature dependence
  • Gazi University Affiliated: Yes


© 2022In this work, the temperature-dependent (80–360 K) dielectric properties of the Au/ZnO-PVA/n-Si structure was investigated employing capacitance-voltage (C–V) and conductance-voltage (G/ω-V) experiments at 1 MHz. The results indicate that all electrical and dielectric variables in these structures are forcefully dependent on temperature. Also, using the interlayer ZnO-PVA nanocomposite has caused changes to these parameters. Because of the presence of series resistance, the amount of C and G/ω increases as the temperature rises. The values of EF increase with temperature, whereas the values of barrier height decrease from 1.045 eV to 0.943 eV, and the value of α extract from ΦB-T plot is obtained −3.5 × 10−4 eV/K that is approximately equal to the silicon temperature coefficient. The value of activation energy is obtained 0.04 eV which is a modest amount obtained from the conduction procedure's contribution to the boundary grains.