Preparation of mixed copper/PVA nanocomposites as an interface layer for fabrication of Al/Cu-PVA/p-Si Schottky structures

Akhlaghi E. A. , Badali Y., ALTINDAL Ş., Azizian-Kalandaragh Y.

Physica B: Condensed Matter, vol.546, pp.93-98, 2018 (Peer-Reviewed Journal) identifier identifier

  • Publication Type: Article / Article
  • Volume: 546
  • Publication Date: 2018
  • Doi Number: 10.1016/j.physb.2018.06.019
  • Journal Name: Physica B: Condensed Matter
  • Journal Indexes: Science Citation Index Expanded, Scopus
  • Page Numbers: pp.93-98
  • Keywords: Cu-doped PVA, Ultrasound-assisted, MPS structures, Electrical parameters, Energy dependent profile of N-ss, I-V-T, ELECTRICAL CHARACTERISTICS, SERIES RESISTANCE, DIODES, NANOSTRUCTURES, NANOPARTICLES, DEPENDENCE, SEMICONDUCTOR, MECHANISMS, PARAMETERS


© 2018 Elsevier B.V.In this study, simple ultrasound-assisted method was used for prepare the composite of (Cu-doped PVA) interfacial layer between metal and semiconductor (Al/p-Si). The scanning electron microscopy (SEM) images of the prepared (Cu-doped PVA) nanocomposites have shown an uniform fish scale shape, which are about 100 nm long and several tens of nm in width. Both the Al/p-Si (MS) and Al/(Cu-PVA)/p-Si (MPS) structures were fabricated on the same Si wafer to investigate the effect of this polymer layer on the electrical characteristics by using the current-voltage (I-V) and capacitance/conductance-voltage (C/G-V) measurements at room temperature. The values of reverse-saturation current (Io), ideality factor (n) and zero-bias barrier height (ΦBo) were obtained from the liner part of the forward bias I-V plot as 6.6 × 10−10 A, 3.67 and 0.84 eV for MS structure and 1.82 × 10−8 A, 4.18 and 0.76 eV for MPS structure, respectively. MPS structure has a good rectifier behavior with low leakage current in comparison to the MS structure. The high values of n was attributed to the barrier inhomogeneity at Al/p-Si, special density distribution of Nss at (Cu-PVA)/p-Si interface and both the existence of native SiO2 and deposited of (Cu-doped PVA) interlayer at M/S interface. The energy dependent values of Nss were obtained from the forward bias I-V data and they ranged from the 1.85 × 1013 eV−1cm−2 (0.60 eV -Ev) to 7.40 × 1013 eV−1cm−2 (0.40 eV - Ev) for MS structure and 9.81 × 1012 eV−1cm−2 (0.67 eV -Ev) to 5.26 × 1013 eV−1cm−2 (0.47 eV -Ev) for the MPS structure. Experimental results show that the (Cu-PVA) interlayer can be successfully used instead of traditional insulator layer because of the saturation of dangling bonds.