Distribution of interface traps in Au/2% GC-doped Ca3Co4Ga0.001Ox/n-Si structures

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Eroglu A. G., Yıldırım M., Durmuş P., Dokme İ.

JOURNAL OF APPLIED POLYMER SCIENCE, cilt.137, 2020 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 137
  • Basım Tarihi: 2020
  • Doi Numarası: 10.1002/app.48399
  • Dergi Adı: JOURNAL OF APPLIED POLYMER SCIENCE
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, PASCAL, Aerospace Database, Applied Science & Technology Source, Biotechnology Research Abstracts, Chimica, Communication Abstracts, Compendex, INSPEC, Metadex, Civil Engineering Abstracts
  • Anahtar Kelimeler: density of interface traps, depletion capacitance, graphene, parallel conductance, ADMITTANCE CHARACTERISTICS, ELECTRICAL-PROPERTIES, VOLTAGE-DEPENDENCE, FREQUENCY, DIODES
  • Gazi Üniversitesi Adresli: Evet

Özet

This study presents voltage-dependent profile of interface traps in Au/n-Si structure with 2% graphene-cobalt-doped Ca3Co4Ga0.001Ox interfacial layer. Admittance measurements revealed capacitance-voltage (C-V) plots with typical regions of a metal-insulator-semiconductor structure through inversion, depletion, and accumulation regions. Frequency dispersion is observed in C-V plots and such behavior was explained with excess capacitance, which is associated with the density of interface traps (D-it) in the structure because larger D-it is observed when the measurements are held at low frequencies due to the fact that traps can follow the signal depending on their lifetime. D-it was also obtained using conductance method, which also provided lifetime of the traps. The difference between the values of D-it was attributed to the difference in extraction methods. Obtained results showed that Au/2% graphene-cobalt-doped Ca3Co4Ga0.001Ox/n-Si structure yields promising electrical characteristics when the structure is operated at high frequencies. (c) 2019 Wiley Periodicals, Inc. J. Appl. Polym. Sci. 2019, 136, 48399.