ACTA PHYSICA POLONICA A, cilt.121, sa.1, ss.247-248, 2012 (SCI-Expanded)
Titanium dioxide (TiO2) thin films having different thicknesses of 220, 260, and 300 nm were deposited onto well-cleaned n-type silicon substrates by reactive DC magnetron sputtering and annealed in the range of 200-1000 degrees C in steps of 200 degrees C. The effects of thermal annealing and thickness variation on the crystalline quality and surface morphology of the films were investigated by X-ray diffraction and atomic force microscopy measurements. It was found that the film quality and morphology depend on the annealing temperature. TiO2 films exhibit a grain-like surface morphology. The root-mean-square roughness and grain size on the surface increase as a result of increasing film thickness.