Electrical and photocurrent characteristics of Au/PVA (Co-doped)/n-Si photoconductive diodes

Gokcen M., Tunc T., Altindal Ş., Uslu I.

MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS, vol.177, no.5, pp.416-420, 2012 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 177 Issue: 5
  • Publication Date: 2012
  • Doi Number: 10.1016/j.mseb.2012.01.004
  • Journal Name: MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.416-420
  • Keywords: Photoconductive diodes, Co doped PVA, Metal-polymer-semiconductor (MPS), Series resistance effect, PHOTOVOLTAIC PROPERTIES, DIELECTRIC-PROPERTIES, TEMPERATURE-DEPENDENCE, SCHOTTKY, PARAMETERS, POLYMER
  • Gazi University Affiliated: Yes

Abstract

In this work, we investigate the some main electrical and photocurrent properties of the Au/PVA(Co-doped)/n-Si diodes by using current-voltage (I-V) measurements at dark and various illumination intensity. Two types of diodes with and without polyvinyl alcohol (PVA) (Co-doped) polymeric interfacial layer were fabricated and measured at room temperature. Results show that the polymeric interfacial layers and series resistance (R-s) strongly affect the main electrical parameters of these structures. Also, metal/polymer/semiconductor (MPS) diode with PVA (Co-doped) interfacial organic layer is very sensitive to the light such that the current in reverse bias region increase by 10(3)-10(4) times with the increasing illumination intensity. The open circuit voltage V-oc and short-circuit current I-sc values of this MPS diode under 100 mW/cm(2) illumination intensity were found as 0.28 V and 19.3 mu A, respectively. (C) 2012 Elsevier B.V. All rights reserved.