Akademik Veri Yönetim Sistemi
Physica Scripta, cilt.96, sa.9, ss.1-9, 2021 (SCI-Expanded)
In the present study, rubrene-based Schottky barrier structures have been formed by using the evaporation technique to investigate the conductance–voltage (G–V) and capacitance-voltage (C–V) values of the effect of the 60Co gamma-ray irradiation. The conductance and capacitance values were measured before and after 60Co gamma-ray radiation at 100 kHz, 500 kHz and 1 MHz. The frequency-dependent effects of interface state density and series resistance with and without irradiation in dark were analyzed at room temperature. The analysis results imply that values of forward and reverse C characteristics decrease the rate depending on gamma-ray irradiation and the increment of voltage due to the exchange of majority carriers between the majority carrier band of semiconductor and interface states. The irradiation dose and frequency increase show irradiation dispersion at the accumulation region when an A.C. signal is applied to the semiconductor structures. The G–V characteristics of rubrene-based Schottky barrier structures change with gamma radiation dose at different frequencies. Also, these characteristics relate to the density of the interface states. The analyses reveal that Dit values decrease with the increase in frequency before 60Co gamma-ray irradiation. These values also decrease with the increase in frequency at the same radiation doses after 60Co gamma-ray irradiation. They decrease with the increase in irradiation doses at the same frequency, except for 100 kHz. Experimental results indicate that rubrene-based Schottky barrier structures can be altered using 60Co gamma-ray irradiation. The experimental contributions indicate a substantial step forward in the structure-function relationship in the benchmark organic semiconductors.