Electronic transport of Au/(Ca1.9Pr0.1Co4Ox)/n-Si structures analysed over a wide temperature range

Alialy S., Kaya A., Maril E., Altindal Ş., Uslu I.

PHILOSOPHICAL MAGAZINE, cilt.95, sa.13, ss.1448-1461, 2015 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 95 Sayı: 13
  • Basım Tarihi: 2015
  • Doi Numarası: 10.1080/14786435.2015.1033029
  • Dergi Adı: PHILOSOPHICAL MAGAZINE
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.1448-1461
  • Anahtar Kelimeler: temperature dependent, (Ca1.9Pr0.1Co4Ox) interfacial layer, current-transport mechanisms, Gaussian distribution (GD) of BHs, CURRENT-VOLTAGE CHARACTERISTICS, THERMIONIC-FIELD EMISSION, AU/N-GAAS, SCHOTTKY BARRIERS, PARAMETERS, HEIGHT, DIODES
  • Gazi Üniversitesi Adresli: Evet

Özet

The barrier height (BH) of the Au/(Ca1.9Pr0.1Co4Ox)/n-Si structure was evaluated in the temperature range of 120-360K using current-voltage (I-V) measurements. The zero-bias BH (phi(Bo)) and ideality factor (n) values deduced from standard thermionic emission theory were found to be 0.35eV and 6.30 at 120K and 0.83eV and 5.1 at 360K, respectively. Because such changes in phi(Bo) were not in agreement with the negative temperature coefficient (alpha) of the Si band gap, effects of tunnelling and BH inhomogeneity were added to the analysis of junction current. With this modification, the value of phi(Bef). was found to decrease with temperature at a rate of -2.4x10(-4)eVK(-1) in approximate agreement with the known alpha of the Si band gap. Attempts to model the inhomogeneous BH with a single Gaussian distribution were also successful, rendering a mean value of BH (