GaSb/InGaAs quantum dot-well hybrid structure active regions in solar cells

Laghumavarapu R. B., Liang B. L., Bittner Z. S., Navruz T. S., Hubbard S. M., Norman A., ...More

SOLAR ENERGY MATERIALS AND SOLAR CELLS, vol.114, pp.165-171, 2013 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 114
  • Publication Date: 2013
  • Doi Number: 10.1016/j.solmat.2013.02.027
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.165-171
  • Keywords: Quantum dot (QD), Quantum well (QW), Intermediate band solar cells (IBSC), Gallium antimonide (GaSb), Photovoltaics (PV), Quantum dot-well (QDW) solar cells, EFFICIENCY
  • Gazi University Affiliated: Yes


GaSb/InGaAs quantum dot-well (QDW) hybrid active regions with type-II band alignment are explored for increasing the infrared absorption in GaAs solar cells. Analyzed GaAs p-i-n structures comprise five layers of either GaSb quantum dot (QD), InGaAs quantum well (QW) or GaSb/InGaAs QDW layers in the I-region. It is found that the QDW solar cells outperform the QW and QD solar cells beyond GaAs band edge. In QDW solar cells an increase in efficiency is observed over QD solar cells due to additional QW absorption. An analysis of bulk response degradation in QDW solar cell is also presented. Improved photoresponse in QDW solar cells over QW and QD solar cells proves the potential for QDW hybrid structures in achieving high efficiency intermediate band solar cells. (C) 2013 Elsevier B.V. All rights reserved.