GaSb/InGaAs quantum dot-well hybrid structure active regions in solar cells


Laghumavarapu R. B. , Liang B. L. , Bittner Z. S. , NAVRUZ T. S. , Hubbard S. M. , Norman A., ...More

SOLAR ENERGY MATERIALS AND SOLAR CELLS, vol.114, pp.165-171, 2013 (Journal Indexed in SCI) identifier identifier

  • Publication Type: Article / Article
  • Volume: 114
  • Publication Date: 2013
  • Doi Number: 10.1016/j.solmat.2013.02.027
  • Title of Journal : SOLAR ENERGY MATERIALS AND SOLAR CELLS
  • Page Numbers: pp.165-171

Abstract

GaSb/InGaAs quantum dot-well (QDW) hybrid active regions with type-II band alignment are explored for increasing the infrared absorption in GaAs solar cells. Analyzed GaAs p-i-n structures comprise five layers of either GaSb quantum dot (QD), InGaAs quantum well (QW) or GaSb/InGaAs QDW layers in the I-region. It is found that the QDW solar cells outperform the QW and QD solar cells beyond GaAs band edge. In QDW solar cells an increase in efficiency is observed over QD solar cells due to additional QW absorption. An analysis of bulk response degradation in QDW solar cell is also presented. Improved photoresponse in QDW solar cells over QW and QD solar cells proves the potential for QDW hybrid structures in achieving high efficiency intermediate band solar cells. (C) 2013 Elsevier B.V. All rights reserved.