Asymmetric condition computed from the four tone input GaN HEMT Dört ton girişli GaN HEMT için asimetrik durumun belirlenmesi


Yildirim R., Çelebi F., YAVUZCAN H. G. , Gökrem L.

2009 International Conference on Application of Information and Communication Technologies, AICT 2009, Baku, Azerbaycan, 14 - 16 Ekim 2009 identifier

Özet

Asymmetric condition among the IMD components with respect to gate to source voltage (Vgs) of four tone input GaN HEMT is determined which is based on the carrier frequency (ω0). In addition to that, the critical operating frequency interval is established. ©2009 IEEE.