Optimizing Schottky barrier diodes: the role of PVC and PVC: molybdenum interlayers in electrophysical properties

AZIZIAN-KALANDARAGH Y., Yeşilyurt H., Yükseltürk E., ALTINDAL Ş., ÖZÇELİK S.

Journal of Materials Science: Materials in Electronics, cilt.36, sa.17, 2025 (SCI-Expanded) identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 36 Sayı: 17
  • Basım Tarihi: 2025
  • Doi Numarası: 10.1007/s10854-025-15121-2
  • Dergi Adı: Journal of Materials Science: Materials in Electronics
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Aerospace Database, Applied Science & Technology Source, Chemical Abstracts Core, Communication Abstracts, Compendex, Computer & Applied Sciences, INSPEC, MEDLINE, Metadex, Civil Engineering Abstracts
  • Gazi Üniversitesi Adresli: Evet

Özet

In this research, the n-Si wafer is used to generate Au/n-Si (C0), Au/PVC/n-Si (C1), and Au/PVC: Molybdenum (Mo)/n-Si (C2) structures to examine the effects of PVC and PVC:Mo interlayers on the electrophysical characteristics of Schottky barrier diodes (SBDs). The mean crystallite size of the Mo nanostructure is computed by X-ray diffraction (XRD) spectroscopy. The I-V data is used to derive the electrical properties of these structures. These diodes’ current conduction mechanisms (CCMs) and energy-dependent distributions of surface states (Nss) are obtained. By reducing the ideality factor (n), series resistance (Rs), Nss, and leakage current (I0), as well as raising Rsh together with barrier height (BH), the usage of PVC and Mo-doped PVC interfacial polymer layers improves the performance of SBDs. Capacitance/conductance-frequency (C/G-f) measurements are used to study the dielectric constant (ε′)/loss (ε′′) and ac electrical conductivity (σac) in a wide frequency range. The negative capacitance/dielectric origin at low frequencies is thoroughly discussed.