Anomalous Peak in the Forward-Bias C-V Plot and Temperature-Dependent Behavior of Au/PVA (Ni,Zn-doped)/n-Si(111) Structures


TUNÇ T., ALTINDAL Ş., DÖKME İ., Uslu H.

JOURNAL OF ELECTRONIC MATERIALS, vol.40, no.2, pp.157-164, 2011 (Peer-Reviewed Journal) identifier identifier

  • Publication Type: Article / Article
  • Volume: 40 Issue: 2
  • Publication Date: 2011
  • Doi Number: 10.1007/s11664-010-1440-9
  • Journal Name: JOURNAL OF ELECTRONIC MATERIALS
  • Journal Indexes: Science Citation Index Expanded, Scopus
  • Page Numbers: pp.157-164
  • Keywords: Anomalous peak, interface states, series resistance, temperature dependence, CAPACITANCE-VOLTAGE CHARACTERISTICS, DIELECTRIC-PROPERTIES, PHOTOVOLTAIC PROPERTIES, ELECTRICAL-PROPERTIES, SCHOTTKY DIODES, SERIES RESISTANCE, INTERFACE STATES, BARRIER HEIGHT, P-TYPE, PARAMETERS

Abstract

In this study, the temperature-dependent mean density of interface states (N-SS) and series resistance (R-S) profiles of Au/PVA (Ni,Zn-doped)/n-Si(111) structures are determined using current-voltage (I-V) and admittance spectroscopy [capacitance-voltage (C-V) and conductance-voltage G/omega-V] methods. The other main electronic parameters such as zero-bias barrier height (Phi(B0)), ideality factor (n), and doping concentration (N-D) are also obtained as a function of temperature. Experimental results show that the values of Phi(B0), n, R-S, and N-SS are strongly temperature dependent. The values of Phi(B0) and R-S increase with increasing temperature, while those of n and N-SS decrease. The C-V plots of Au/PVA (Ni,Zn-doped)/n-Si(111) structures exhibit anomalous peaks in forward bias (depletion region) at each temperature, and peak positions shift towards negative bias with increasing temperature. The peak value of C has been found to be strongly dependent on N-SS, R-S, and temperature. The experimental data confirm that the values of N-SS, R-S, temperature, and the thickness and composition of the interfacial polymer layer are important factors that influence the main electrical parameters of the device.