The Effect of Growth Conditions on The Optical and Structural Properties of InGaN/GaN MQW LED Structures Grown by MOCVD

ÇETİN S., SAĞLAM S., ÖZÇELİK S., Ozbay E.

GAZI UNIVERSITY JOURNAL OF SCIENCE, cilt.27, sa.4, ss.1105-1110, 2014 (ESCI) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 27 Sayı: 4
  • Basım Tarihi: 2014
  • Dergi Adı: GAZI UNIVERSITY JOURNAL OF SCIENCE
  • Derginin Tarandığı İndeksler: Emerging Sources Citation Index (ESCI), Scopus
  • Sayfa Sayıları: ss.1105-1110
  • Anahtar Kelimeler: Metalorganic chemical vapor deposition, InGaN, Light emitting diode, Multi quantum well, High resolution X-ray diffraction, Photoluminescence
  • Gazi Üniversitesi Adresli: Evet

Özet

Five period InGaN/GaN MQW LED wafers were grown by low pressure MOCVD on an AlN buffer layer, which was deposited on a c-plane (0001)-faced sapphire substrate. The effect of growth conditions, such as the well growth time, growth temperatures, and indium flow rate on the properties of MQW structures were investigated by using high resolution X-ray diffraction and room temperature photoluminescence. By increasing growth temperature, the emission wavelengths showed a blue-shift while it red-shifted via an increase in the indium flow rate. The emission wavelength can be tuned by way of changing the well growth time of the samples.