Research Information System
Indian Journal of Physics, vol.99, no.13, pp.5057-5067, 2025 (SCI-Expanded, Scopus)
This study investigates the dielectric properties of an Au/SnO2/p-InP (MOS) capacitor through admittance measurements over a broad frequency and temperature range. The experimental results demonstrate the dependence of capacitance and conductance on temperature, frequency, and applied bias voltage. Key findings reveal a temperature-dependent capacitance behavior where capacitance decreases under reverse bias due to carrier freezing and increases under forward bias due to carrier activation. In the forward bias region, the capacitance also exhibits a decreasing trend with increasing frequency, which is attributed to the limited response of interface states at higher frequencies. The dielectric constant and loss increase with temperature but decrease at higher frequencies as a result of the reduced ability of dipoles to follow the alternating field. The ac conductivity behavior is consistent with a short-range hopping mechanism, where both temperature and frequency contribute to enhanced conductivity. The results align with the correlated barrier hopping (CBH) conduction model. This work provides a comprehensive analysis of the frequency- and temperature-dependent electrical characteristics of MOS capacitors, thereby addressing existing gaps in the literature. The findings are important for the design and optimization of semiconductor devices and sensor technologies, improving electronic performance in various applications.