Dielectric, conductivity and modulus analysis of AuGe/SiO2/p-Si/AuGe capacitor


Buyukbas A., TATAROĞLU A. , Balbasi M.

JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, cilt.17, ss.1134-1138, 2015 (SCI İndekslerine Giren Dergi) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 17
  • Basım Tarihi: 2015
  • Dergi Adı: JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS
  • Sayfa Sayıları: ss.1134-1138

Özet

In this study, the dielectric, conductivity and modulus properties of AuGe/SiO2/p-Si/AuGe capacitor with interfacial thermal oxide layer were investigated using impedance measurements. These measurements were carried out in a wide frequency range. Dielectric parameters such as dielectric constant (epsilon'), loss (epsilon ''), loss tangent (tan delta), ac conductivity (sigma(ac)), and real (M') and imaginary (M '') component of complex electric modulus (M-star) values were calculated from impedance measurements. Experimental results show that the values of dielectric parameters are a strong function of frequency.