The Investigation of Frequency and Voltage Dependence of Electrical Characteristics in Al/P3HT/p-Si (MPS) Structures

Yukselturk E., Cotuk M., Zeyrek S., Altindal Ş., Bulbul M. M.

International Congress on Semiconductor Materials and Devices (ICSMD), Konya, Türkiye, 17 - 19 Ağustos 2017, cilt.18, ss.1842-1851 identifier

  • Yayın Türü: Bildiri / Tam Metin Bildiri
  • Cilt numarası: 18
  • Basıldığı Şehir: Konya
  • Basıldığı Ülke: Türkiye
  • Sayfa Sayıları: ss.1842-1851
  • Anahtar Kelimeler: Al/P3HT/p-Si MPS structures, C-V-f and G/w-V-f characteristics, Voltage dependent profile of R-s and N-ss, ORGANIC SEMICONDUCTORS, CHARGE-TRANSPORT, INTERFACE, CAPACITANCE, P3HT, PARAMETERS, DENSITY, ORIGIN, DIODE, FILMS
  • Gazi Üniversitesi Adresli: Evet

Özet

Metal-polymer-semiconductor (Al/P3HT/p-Si) structures have been fabricated and their electrical characteristics have been investigated using capacitance-voltage (C-V) and conductance-voltage (G/omega-V) measurements. These measurements were performed in the frequency and voltage range of 3 kHz-1MHz and +/- 5 V, respectively, at room temperature. The values of diffusion potential (V-D), doping concentration of acceptor atoms (N-A), Fermi energy level (E-F) and barrier height (Phi(B)) were obtained from the reverse bias C-2 vs V plot for each frequency by considering interface states (N-ss), series resistance (R-s), and interfacial layer effects. All these parameters were found as strong functions of frequency and voltage. The values of both N-ss and R-s decrease with increasing frequency. On the other hand, the value of N-ss is prominent in the inversion and depletion regions at low frequency, but R-s and interfacial layer are prominent in the accumulation region at high frequency. Therefore, to see the effect of R-s both the C-V and G/omega-V plots were corrected for high frequencies. The voltage dependent profile of N-ss and R-s were also obtained from Hill-Coleman and Nicollian-Brews method, respectively. Obtained results confirm that the values of N-ss, R-s and interfacial layer are more effective on the impedance measurements. (C) 2019 Elsevier Ltd. All rights reserved.