In this study, the effects of ionizing radiation on organic interfaced Schottky diodes were investigated. The prepared
metal/coronene/n-Si Schottky structures were exposed to different dose of gamma radiation and examined the variations
of performance parameters of these structures before and after radiation. The coronene material was used as an organic
interface layer and coated onto the n-type silicon substrates as a thin film by using the spin coating technique after various
chemical cleaning methods. The changes in the electrical characteristic of the structures were investigated using the I-V,
C-V and G-V measurement techniques before and after irradiation in dark environment and at room temperature.