Identification of Current Transport Mechanisms and Temperature Sensing Qualifications for Al/(ZnS-PVA)/p-Si Structures at Low and Moderate Temperatures


Alsac A. A. , Serin T., Tan S. O. , ALTINDAL Ş.

IEEE SENSORS JOURNAL, vol.22, no.1, pp.99-106, 2022 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 22 Issue: 1
  • Publication Date: 2022
  • Doi Number: 10.1109/jsen.2021.3127130
  • Journal Name: IEEE SENSORS JOURNAL
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Aerospace Database, Communication Abstracts, Compendex, INSPEC, Metadex, Civil Engineering Abstracts
  • Page Numbers: pp.99-106
  • Keywords: Current-transport mechanism, temperature sensitivity, Al/(ZnS-PVA)/p-Si structures, double Gaussian distribution (DGD), CAPACITANCE-VOLTAGE CHARACTERISTICS, SCHOTTKY DIODES, BARRIER HEIGHT, CONDUCTION MECHANISMS, ELECTRICAL-PROPERTIES, MS DIODES, INTERLAYER, CONTACTS
  • Gazi University Affiliated: Yes

Abstract

Current transport mechanisms (CTMs) and temperature sensing qualifications of Al/(ZnS-PVA)/p-Si structures are identified with the help of temperature-dependent forward bias current-voltage measurements. To determine the current transport mechanism, the electrical parameters of the structure such as saturation current (I-o), zero - bias barrier height (Phi(B0)), ideality factor (n) are determined from these characteristics measured in the temperature range of 60-320 K. The temperature dependencies of the calculated Phi(Bo) and n values indicate the existence of double Gaussian distribution (DGD) of barrier height (BH) at M/S interface. Using the modified Richardson plots, Phi(B0) and A* values have been found in the high temperature region (HT) (160-320 K) as 0.95 eV, 31.64 A.cm(-2)K(-2), respectively and in the low temperature region (60-140 K) as 0.3871 eV, 20.996 A.cm(-2)K(-2), respectively. The A* value in the HT region is very close to its theoretical value and hence the CTMs can be explained by the DGD of BH. Sensitivity (S) values are calculated for each voltage at forward biases from the temperature-dependent variation of the logarithm of the