Microwave Whispering-Gallery-Mode Photoconductivity Measurement of Recombination Lifetime in Silicon

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Yurchenko V., Navruz T. S., Ciydem M., Altıntaş A.

ADVANCED ELECTROMAGNETICS, cilt.8, sa.2, ss.101-107, 2019 (ESCI) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 8 Sayı: 2
  • Basım Tarihi: 2019
  • Doi Numarası: 10.7716/aem.v8i2.1127
  • Dergi Adı: ADVANCED ELECTROMAGNETICS
  • Derginin Tarandığı İndeksler: Emerging Sources Citation Index (ESCI), Scopus
  • Sayfa Sayıları: ss.101-107
  • Gazi Üniversitesi Adresli: Evet

Özet

We present a whispering-gallery-mode resonance-enhanced microwave-detected photoconductivity-decay method for contactless measurement of recombination lifetimes in high-resistivity semiconductor layers. We applied the method to undoped Si wafers of high resistivity, at 5 and 30 kOhm*cm, and measured conductivity relaxation times of 10 and 14 microseconds, respectively. In the wafers being considered, relaxation times are likely to be defined by the electron-hole diffusion from the bulk to the wafer surface.