Study of non-thermal plasma discharge in semiconductor gas discharge electronic devices


Kurt H. H. , Inaloz A., Salamov B. G.

OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS, vol.4, no.2, pp.205-210, 2010 (Journal Indexed in SCI) identifier identifier

  • Publication Type: Article / Article
  • Volume: 4 Issue: 2
  • Publication Date: 2010
  • Title of Journal : OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS
  • Page Numbers: pp.205-210

Abstract

Current and discharge light emission (DLE) behaviors are studied experimentally in neon as a function of pressure p (30-760 Torr). interelectrode distances d(330 mu m-530 mu m) and diameter D (9 mm -18 mm) of the cathode in a semiconductor gas discharge electronic device (SGDED) with GaAs cathode. The discharge features of neon are investigated under low and atmospheric-pressures non-thermal microdischarge conditions. Experimental analysis has been made using N-shaped CVCs and time-dependent current and DLE to understand the features of Ne. Dynamic behavior of current is obtained within the feeding voltage of U = 200-1200 V under different IR light intensities incident on cathode material. If the applied electric field is much higher than the critical one, oscillatory behavior develops. While accelerating electrons produce ionizations with sufficient energies, the double layer acts as an internal source of charged particles. Current and DLE from the discharge burning up to atmospheric pressure in Ne usually has homogeneous form, however non-homogeneous CVC forms are observed under specific conditions.