Comparative investigation of the electrical and photoresponse characteristics of Au/n-Si and Au/(PVA: Zn)/n-Si Schottky barrier diodes
Applied Physics A: Materials Science and Processing, cilt.132, sa.10, 2026 (SCI-Expanded, Scopus)
- Yayın Türü: Makale / Tam Makale
- Cilt numarası: 132 Sayı: 10
- Basım Tarihi: 2026
- Doi Numarası: 10.1007/s00339-026-10171-7
- Dergi Adı: Applied Physics A: Materials Science and Processing
- Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Aerospace Database, Chemical Abstracts Core, Chimica, Compendex, INSPEC, Academic Search Ultimate (EBSCO), Engineering Source (EBSCO), Materials Science & Engineering Collection (ProQuest), Technology Collection (ProQuest)
- Anahtar Kelimeler: Electrical and optoelectronic parameters, Energy-dependent interface traps, Light and voltage dependence, MS and MPS type structures, Voltage-dependent current/impedance
- Gazi Üniversitesi Adresli: Evet
Özet
The electrical and photoresponse characteristics of the Au/n-Si and Au/(PVA: Zn)/n-Si Schottky diodes have been investigated in the dark and under 100 mW cm− 2 illumination using voltage-dependent current, capacitance, and conductance measurements. The key electrical parameters, such as the ideality factor, zero-bias barrier height, and series resistance of these structures, were extracted from the forward-bias current-voltage data by fitting them with thermionic-emission and Cheung functions, and the results were compared. The other key electrical parameters, such as the density of donor-atom dopants, depletion-layer width, barrier height, and electric field, were also extracted from the reverse-bias inverse-square capacitance-voltage plots. The energy-dependent curves of the density of interface traps and the voltage-dependent resistance were obtained by considering the voltage-dependent ideality factor and barrier height from the Card-Rhoderick method and Ohm’s Law. The voltage-dependent photoresponse parameters, including photosensitivity, photoresponsivity, and theoretical shot-noise-limited specific detectivity, were evaluated from reverse-bias current–voltage characteristics measured under dark and 100 mW cm-2-2 illumination conditions, using the dark current as the reference for the photoresponse calculations. The experimental results indicate that the Au/(PVA: Zn)/n-Si structure exhibits good performance, with a higher rectification ratio, barrier height, and photosensitivity, and lower surface-state trap density and leakage current.