The study on characterizations of SrTiO3 thin films with different growth temperatures

Kınacı B., Akın Sönmez N., Durukan İ., Memmedli T., Ozcelik S.

SUPERLATTICES AND MICROSTRUCTURES, vol.76, pp.234-243, 2014 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 76
  • Publication Date: 2014
  • Doi Number: 10.1016/j.spmi.2014.10.018
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.234-243
  • Keywords: RF magnetron sputtering, SrTiO3/p-Si (100) structure, Current-voltage-temperature characteristics, SCHOTTKY-BARRIER DIODES, SOL-GEL, ELECTRICAL CHARACTERISTICS, I-V, SUBSTRATE, SI
  • Gazi University Affiliated: Yes


Strontium titanate (SrTiO3) thin films were deposited on cleaned p-type (100) oriented silicon substrates using radio frequency (RF) magnetron sputtering method at a substrate temperatures of 200 degrees C, 300 degrees C, 400 degrees C and 500 degrees C. During deposition, sputtering pressure (P-S) was maintained at 3.9 x 10(-3) Torr using argon (A(r)) gas, and RF power (P-RF) was set to a constant value of 100W for all experiments. Crystalline quality, surface morphology and band gap of the films were investigated by X-ray diffraction (XRD) analysis, atomic force microscopy (AFM) and photoluminescence (PL) measurements. Experimental results showed crystalline quality, and surface morphology of the films were remarkably improved by high substrate temperature. In addition to above analyzes, SrTiO3/p-Si structure deposited at 500 degrees C substrate temperature have been investigated using temperature dependent currentvoltage (I-V-T) characteristics in the temperature range of 110-350 K by steps of 30 K due to its better characteristics. The ideality factor (n), barrier height (Phi(b)) and series resistance (R-s) values were extracted. Moreover, Phi(b) and R-s values were recalculated using Norde's method. (C) 2014 Elsevier Ltd. All rights reserved.