Characterization of series resistance in the Sn/p-InP Schottky barrier diodes using temperature dependent C-V,G/w and DLTS

Korucu D., Altindal Ş., Mammadov T. S., Oezcelik S.

OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS, cilt.3, sa.3, ss.171-174, 2009 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 3 Sayı: 3
  • Basım Tarihi: 2009
  • Dergi Adı: OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.171-174
  • Gazi Üniversitesi Adresli: Evet

Özet

The temperature dependence of capacitance-voltage (C-V) and conductance-voltage (G/w-V) characteristics and DLTS measurements of Sn/p-InP Schottky barrier diode (SBDs) have been investigated in the temperature range of 80-400 K at 1 MHz. Experimental results show that both the C-V and Rs-V plots exhibit a peak, and this peak positions shift toward positive bias voltage with increasing temperature. The C-V and G/w-V characteristics show that the interface states (N(ss)) and series resistance (R(s)) are strongly influence the electrical parameters of the Sn/p-InP (SBD). Also, Deep level transient spectroscopy (DLTS) measurement has been performed to investigate defects in bulk p-type InP doped with Zn.