Nanowire geometry effects on devices and transport mechanisms: SnS2/SiNW heterojunction

COŞKUN E., Emir C., TERLEMEZOĞLU BİLMİŞ M., PARLAK M.

Journal of Materials Science, cilt.58, sa.38, ss.15132-15143, 2023 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 58 Sayı: 38
  • Basım Tarihi: 2023
  • Doi Numarası: 10.1007/s10853-023-08891-9
  • Dergi Adı: Journal of Materials Science
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, Aerospace Database, Applied Science & Technology Source, Chemical Abstracts Core, Chimica, Communication Abstracts, Compendex, Computer & Applied Sciences, INSPEC, MEDLINE, Metadex, Public Affairs Index, Civil Engineering Abstracts
  • Sayfa Sayıları: ss.15132-15143
  • Gazi Üniversitesi Adresli: Evet

Özet

The semiconductor nanowire technology has become essential in developing more complex and efficient devices. In this study, the Si nanowire (SiNW) heterojunction structure with a two-dimensional SnS2 thin film was investigated. The SiNW array was created by the metal-assisted etching method because of length control and production over large areas of nanowires. The created SiNW has more diminishing reflectivity compared with Si planar substrate. The diode characteristics of SnS2/SiNW and SnS2/Si planar heterojunctions were investigated by dark current analysis at room temperature, and the improving diode characteristics by the three-dimensional interface between SiNW and SnS2 thin film were discussed. Transport mechanisms of the SiNW heterojunction were also studied for various methods. Thermionic emission and thermally assisted tunneling models are the dominant mechanisms for low voltages (0.02–0.20 V), and the space charge limiting current mechanism dominates the current for comparingly high voltages (0.20–0.40 V). All the values reveal the significant impact of the SiNW on heterojunctions for improving efficiency.