A qualified In0.15Ga0.85As/GaAs superlattice was grown on an n-type GaAs(100) Substrate by molecular beam epitaxy(MBE). Analysis of this structure was first carried out by X-Ray diffraction(XRD) and this structure's the interface thicknesses, roughness and x concentration determined at nanoscale. Secondly, the electrical characteristics of this sample such as the current-voltage-ternperature (I-V-T), capacitance-voltage-temperature (C-V-T) and conductance-voltage temperature (G-V-T) were studied over a wide temperature range. The energy distribution of interface states was determined from the forward bias IN characteristics by taking into account the bias dependence of the effective barrier height. Experimental results show that the forward and reverse I-V characteristics are similar to Schottky-junction behavior. The ideality factor n, series resistance R-s, barrier height phi(B) and density of interface states N-ss were found to be strong functions of temperature. According to thermionic emission (TE) theory, the zero-bias barrier height (phi(Bo)) calculated from forward bias I-V characteristics was found to increases with increasing temperature. In addition, the value of R-s as a function of both voltage and temperature was obtained from C-V and G-V characteristics. The temperature dependent of IN, C-V and G-V characteristics confirmed that the distribution the R-s and N-ss are important parameters that influence the electrical characteristics of these devices.