On double exponential forward bias current-voltage (I-V) characteristics of Au/Ca3Co4Ga0.001Ox/n-Si/Au (MIS) type structures in temperature range of 80-340 K

Maril E., Altindal S., Kaya A., Kocyigit S., Uslu I.

PHILOSOPHICAL MAGAZINE, vol.95, no.10, pp.1049-1068, 2015 (Journal Indexed in SCI) identifier identifier

  • Publication Type: Article / Article
  • Volume: 95 Issue: 10
  • Publication Date: 2015
  • Doi Number: 10.1080/14786435.2015.1009517
  • Page Numbers: pp.1049-1068
  • Keywords: Au/Ca3Co4Ga0.001Ox/n-Si/Au structures, temperature and voltage dependent, modified richardson plot, double Gaussian distribution, DOUBLE GAUSSIAN DISTRIBUTION, BARRIER HEIGHT DISTRIBUTION, GAAS SCHOTTKY DIODES, AU/N-GAAS, TRANSPORT, PARAMETERS, DEPENDENCE, SI


Current transport mechanisms (CTMs) of Au/Ca3Co4Ga0.001Ox/n-Si/Au (MIS) type structures were investigated using current-voltage (I-V) characteristics in the temperature range of 80-340K. Semilogarithmic I-V plots show two linear regions corresponding to low (0.075-0.250V) and moderate (0.27-0.70V) biases, respectively. Zero-bias barrier height (phi(B0)) was observed to increase with increase in the temperature, whereas opposite behaviour was observed for ideality factor (n). phi(B0) and (n(-1)-1) vesus q/2kT and phi(B0) versus n plots were drawn to get an evidence of Gaussian distribution (GD) of the barrier heights. These plots, too, show two linear regions corresponding to low (80-160K) and high (200-340K) temperature ranges (LTR and HTR), respectively. Mean value of barrier height (