Current-voltage characteristics of Al/Rhodamine-101/n-GaAs and Cu/Rhodamine-101/n-GaAs rectifier contacts

Vural O., Yildirim N., Altindal Ş., Tueruet A.

SYNTHETIC METALS, cilt.157, ss.679-683, 2007 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 157
  • Basım Tarihi: 2007
  • Doi Numarası: 10.1016/j.synthmet.2007.06.013
  • Dergi Adı: SYNTHETIC METALS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.679-683
  • Anahtar Kelimeler: organic semiconductor/inorganic semiconductor contacts, hetero-junction, Schottky contacts, Schottky barrier height, rectification, METAL-SEMICONDUCTOR DIODES, MOLECULAR-BEAM DEPOSITION, BARRIER HEIGHT, SCHOTTKY BARRIERS, INORGANIC SEMICONDUCTOR, SI, TRANSPORT, FILMS, INTERFACE, SURFACES
  • Gazi Üniversitesi Adresli: Evet

Özet

The organic compound Rhodamine-101 (Rh101) film on an n-type GaAs substrate with carrier concentration of 7.3 x 10(15) cm(-3) has been formed by means of the evaporation process, and thus Al/Rh101/n-GaAs and Cu/Rh101/n-GaAs contacts have been fabricated. Our aim is to realize a modification of Schottky barrier height (SBH) of the devices using a thin non- polymeric organic compound layer. The Al/Rh101/n-GaAs and Cu/Rh101/n- GaAs contacts have behaved like rectifying contact with the SBH values of 0.68eV and 0.72eV, and with ideality factor values of 2.61 and 2.60 obtained from their forward bias current-voltage (I-V) characteristics at the room temperature, respectively. It has seen that the SBH values obtained for these devices are significantly different from those obtained for the conventional Al/h-GaAs or Cu/n-GaAs Schottky diodes. Furthermore, it has been demonstrated that the trapped-charge-limited current is the dominant transport mechanism at large forward bias voltage. (C) 2007 Elsevier B.V. All rights reserved.