Modeling and simulation of ZnxCd1-xTe/ZnTe quantum well structure for laser applications

Dehimi S., Dehimi L., Asar T., Mebarki B., Ozcelik S.

OPTIK, cilt.135, ss.153-159, 2017 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 135
  • Basım Tarihi: 2017
  • Doi Numarası: 10.1016/j.ijleo.2017.01.087
  • Dergi Adı: OPTIK
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.153-159
  • Anahtar Kelimeler: Materials, Quantum well, Semiconductor laser, Gain, ZnCdTe, Optoelectronics, THRESHOLD CURRENT-DENSITY, OPTICAL GAIN, II-VI, STRAIN
  • Gazi Üniversitesi Adresli: Evet

Özet

In this work, we modeled and simulated aZn(x)Cd(1-x)Te/ZnTe based single quantum well structure. We have taken into account the effect of carrier density, alloy composition, temperature and wells width on the optical gain as well as threshold current density. The use of ZnTe as a barrier leads to the improvement of the carrier confinement such as Q(c) (83%)/Q(v) (17%). Then, we have optimized the quantum well structure that allows obtaining a threshold current density Jth = 500A/cm(2). This study allowed us to achieve laser diodes VCSEL quantum well reliable and emitting around 0.740 mu m. (C) 2017 Elsevier GmbH. All rights reserved.