© 2017 Elsevier GmbHIn this work, we modeled and simulated aZnxCd1-xTe/ZnTe based single quantum well structure. We have taken into account the effect of carrier density, alloy composition, temperature and wells width on the optical gain as well as threshold current density. The use of ZnTe as a barrier leads to the improvement of the carrier confinement such as Qc (83%)/Qv (17%). Then, we have optimized the quantum well structure that allows obtaining a threshold current density Jth = 500 A/cm2. This study allowed us to achieve laser diodes VCSEL quantum well reliable and emitting around 0.740 μm.