A comparative study on ridge waveguide laser diodes with SiO2 and SiNx passivation layers


Bengi A., Jang S. J. , Yeo C. I. , Mammadov T., Ozcelik S. , Lee Y. T.

Surface and Interface Analysis, cilt.42, ss.963-965, 2010 (SCI Expanded İndekslerine Giren Dergi) identifier identifier

  • Cilt numarası: 42
  • Basım Tarihi: 2010
  • Doi Numarası: 10.1002/sia.3278
  • Dergi Adı: Surface and Interface Analysis
  • Sayfa Sayıları: ss.963-965

Özet

In this study, we have reported the fabrication and device characteristics of metal organic chemical vapor deposition (MOCVD) grown 1.3-(μm InP-based InGaAsP multiquantum well ridge waveguide laser diodes (LDs) for communication systems. The LD parameters such as threshold current, differential resistivity and output power for SiO2 and SiNx passivation layers have been compared. Fabricated LDs have a threshold current, differential resistivity and output power values of 42 mA, 20 ω, 9.3 mW and 51 mA, 25 ω, 6.8 mW forSiO2 and SiNx passivation layers, respectively. The analyses showed that the fabricated LD with SiO2 passivation layer has a better performance than the other one in the view of lower threshold current, differential resistivity and higher output power. Copyright © 2010 John Wiley & Sons, Ltd.