On the temperature dependence of series resistance and interface states in Al/SiO2/p-Si (MIS) Schottky diodes

Yildiz D. E., Altindal Ş.

MICROELECTRONIC ENGINEERING, vol.85, no.2, pp.289-294, 2008 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 85 Issue: 2
  • Publication Date: 2008
  • Doi Number: 10.1016/j.mee.2007.06.015
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.289-294
  • Keywords: C-V-T and G/w-V-T measurements, MIS structure, temperature dependence, series resistance, interface states, CAPACITANCE-VOLTAGE CHARACTERISTICS, C-V, ELECTRICAL CHARACTERIZATION, TUNNEL-DIODES, I-V, PROFILE, MODEL
  • Gazi University Affiliated: Yes


The capacitance-voltage-temperature (C-V-T) and conductance-voltage-temperature (G/w-V-T) characteristics of metal-semiconductor (Al/p-Si) Schottky diodes with thermal growth interfacial layer were investigated by considering series resistance effect in the wide temperature range (80-400 K). It is found that in the presence of series resistance, the forward bias C-V plots exhibit a peak, and experimentally shows that the peak positions shift towards higher positive voltages with increasing temperature, and the peak value of the capacitance has a maximum at 80 K. The C-V and (G/w-V) characteristics confirm that the A,, and R, of the diode are important parameters that strongly influence the electric parameters in (Al/SiO2/p-Si) MIS Schottky diodes. The crossing of the G/w-V curves appears as an abnormality when seen with respect to the conventional behaviour of the ideal MS or MIS Schottky diode. It is thought that the presence of a series resistance keeps this intersection hidden and unobservable in homogeneous Schottky diodes, but it appears in the case of inhomogeneous Schottky diode. In addition, the high frequency (C-m) and conductance (G(m)/W) values measured under both reverse and forward bias were corrected for the effect of series resistance to obtain the real diode capacitance. (c) 2007 Elsevier B.V. All rights reserved.