On the temperature dependence of series resistance and interface states in Al/SiO2/p-Si (MIS) Schottky diodes

Yildiz D. E. , Altindal Ş.

MICROELECTRONIC ENGINEERING, cilt.85, sa.2, ss.289-294, 2008 (SCI İndekslerine Giren Dergi) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 85 Konu: 2
  • Basım Tarihi: 2008
  • Doi Numarası: 10.1016/j.mee.2007.06.015
  • Sayfa Sayıları: ss.289-294


The capacitance-voltage-temperature (C-V-T) and conductance-voltage-temperature (G/w-V-T) characteristics of metal-semiconductor (Al/p-Si) Schottky diodes with thermal growth interfacial layer were investigated by considering series resistance effect in the wide temperature range (80-400 K). It is found that in the presence of series resistance, the forward bias C-V plots exhibit a peak, and experimentally shows that the peak positions shift towards higher positive voltages with increasing temperature, and the peak value of the capacitance has a maximum at 80 K. The C-V and (G/w-V) characteristics confirm that the A,, and R, of the diode are important parameters that strongly influence the electric parameters in (Al/SiO2/p-Si) MIS Schottky diodes. The crossing of the G/w-V curves appears as an abnormality when seen with respect to the conventional behaviour of the ideal MS or MIS Schottky diode. It is thought that the presence of a series resistance keeps this intersection hidden and unobservable in homogeneous Schottky diodes, but it appears in the case of inhomogeneous Schottky diode. In addition, the high frequency (C-m) and conductance (G(m)/W) values measured under both reverse and forward bias were corrected for the effect of series resistance to obtain the real diode capacitance. (c) 2007 Elsevier B.V. All rights reserved.