General electrical characterisation of Ag/TiO2/n-InP/Au Schottky Diode

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Bilgili A. K., Çağatay R., Öztürk M., Özçelik S.

Karadeniz Fen Bilimleri Dergisi, cilt.11, sa.2, ss.328-339, 2021 (Hakemli Dergi)

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 11 Sayı: 2
  • Basım Tarihi: 2021
  • Doi Numarası: 10.31466/kfbd.856824
  • Dergi Adı: Karadeniz Fen Bilimleri Dergisi
  • Derginin Tarandığı İndeksler: TR DİZİN (ULAKBİM)
  • Sayfa Sayıları: ss.328-339
  • Gazi Üniversitesi Adresli: Evet

Özet

In this study Ag/TiO2/n-InP/Au structures are formed on 500 μm thick, (100) oriented n-InP semiconductor having 3.13x1018 cm-3 carrier density, by using sputtering method. TiO2 is grown as an interface with thickness of 60 Å. Some parameters of this structure are investigated in temperature range of 120- 360 K. It is noticed that there are two linear regions in forward bias current-voltage (I-V) plot. These two regions are called as LBR (low bias region) and MBR(middle bias region). Richardson coefficient is determined and mean barrier height is calculated with double Gaussian distribution.