Stacking ensemble machine learning for predicting photodetector performance under varying illumination intensities
SCIENTIFIC REPORTS, cilt.16, sa.1, 2026 (SCI-Expanded, Scopus)
- Yayın Türü: Makale / Tam Makale
- Cilt numarası: 16 Sayı: 1
- Basım Tarihi: 2026
- Doi Numarası: 10.1038/s41598-025-33495-5
- Dergi Adı: SCIENTIFIC REPORTS
- Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, BIOSIS, Chemical Abstracts Core, EMBASE, MEDLINE, Directory of Open Access Journals, Zoological Record, Academic Search Ultimate (EBSCO), Natural Science Collection (ProQuest), Biological Science Database (ProQuest), Biomedical Reference Collection: Corporate Edition (EBSCO), Health Research Premium Collection (ProQuest)
- Açık Arşiv Koleksiyonu: AVESİS Açık Erişim Koleksiyonu
- Gazi Üniversitesi Adresli: Evet
Özet
Photodetectors are essential components in modern optoelectronic technologies, yet experimental characterization of nanomaterial-based devices is often time-consuming and resource-intensive. To address this challenge, this study presents a stacking ensemble learning approach to predict the performance of bismuth-doped graphene quantum dots-based photodetectors under illumination levels ranging from 22 to 110 mW/mm(2). Four boosting algorithms-Adaptive Boosting, Gradient Boosting, Extreme Gradient Boosting, and Categorical Boosting-were trained on datasets obtained under dark, 22, 66, and 110 mW/mm(2), while 44 and 88 mW/mm(2) data were reserved for testing. A stacking ensemble learning model further enhanced prediction accuracy. The final model achieved a coefficient of determination of 0.9874 and a mean absolute error of 0.1840 at 88 mW/mm(2), effectively predicting the logarithmic current-voltage characteristics. The model also estimated key photodetector metrics, including sensitivity (1589.27), responsivity (2.389 mA/W), and specific detectivity (1.16 x 10(10) Jones). This study explores the use of a stacking ensemble of four boosting algorithms to model the performance of Bi-GQD/p-Si photodetectors across different illumination levels, offering a data-driven alternative to traditional characterization.