Akademik Veri Yönetim Sistemi
SCIENTIFIC REPORTS, cilt.16, sa.1, ss.1-16, 2026 (SCI-Expanded, Scopus)
Photodetectors are essential components in modern optoelectronic technologies, yet experimental characterization of nanomaterial-based devices is often time-consuming and resource-intensive. To address this challenge, this study presents a stacking ensemble learning approach to predict the performance of bismuth-doped graphene quantum dots-based photodetectors under illumination levels ranging from 22 to 110 mW/mm². Four boosting algorithms—Adaptive Boosting, Gradient Boosting, Extreme Gradient Boosting, and Categorical Boosting—were trained on datasets obtained under dark, 22, 66, and 110 mW/mm², while 44 and 88 mW/mm² data were reserved for testing. A stacking ensemble learning model further enhanced prediction accuracy. The final model achieved a coefficient of determination of 0.9874 and a mean absolute error of 0.1840 at 88 mW/mm², effectively predicting the logarithmic current–voltage characteristics. The model also estimated key photodetector metrics, including sensitivity (1589.27), responsivity (2.389 mA/W), and specific detectivity (1.16 × 10¹⁰ Jones). This study explores the use of a stacking ensemble of four boosting algorithms to model the performance of Bi-GQD/p-Si photodetectors across different illumination levels, offering a data-driven alternative to traditional characterization.