The effects of annealing temperature on RF-coated GZO thin films on n-Si and PET substrates N-Si ve PET alttaşlar üzerine RF-kaplanan GZO ince filmlere tavlama sicakliǧinin etkileri

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AKIN SÖNMEZ N., Donmez M., Comert B., ASAR T., KINACI B., ÖZÇELİK S.

Journal of the Faculty of Engineering and Architecture of Gazi University, cilt.34, sa.4, ss.1757-1763, 2019 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 34 Sayı: 4
  • Basım Tarihi: 2019
  • Doi Numarası: 10.17341/gazimmfd.571538
  • Dergi Adı: Journal of the Faculty of Engineering and Architecture of Gazi University
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, TR DİZİN (ULAKBİM)
  • Sayfa Sayıları: ss.1757-1763
  • Anahtar Kelimeler: Gallium-doped zinc oxide, annealing, UV sensor, GA-DOPED ZNO, OPTICAL-PROPERTIES, THICKNESS, POWER
  • Gazi Üniversitesi Adresli: Evet

Özet

© 2019 Gazi Universitesi Muhendislik-Mimarlik. All rights reserved.In this study, the effects of thermal annealing on RF-coated GZO thin films on n-Si and PET substrates at room temperature at 200 W RF power were investigated systematically. Deposited film on the n-Si substrate was annealed at range of 100 - 600°C for 1 hour in air at atmospheric pressure with CTA. UV-Vis measurements of flexible films prepared at 100 and 200°C were evaluated due to the deterioration of the PET substrate form at 300°C temperature. The energy band gaps of the films were found as 3.10 and 3.30 eV, respectively. It was revealed from the XRD results that GZO films grown on Si have c-oriented hexagonal wurtzite structure. UV sensor fabrication was performed from the flexible GZO film annealed at 200°C with the highest band gap energy. The UV-light sensitivity of the produced sensor was determined by I-V measurements in light (γ= 365 nm) and dark conditions. Photo-sensitivity of the flexible sensor was found to be 8.07 at 2V.